Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application

Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina

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Main Authors: Alcalde Bessia, F., Flandre, D., André, N., Irazoqui, J., Pérez, M., Gómez Berisso, M., Lipovetzky, J.
Other Authors: Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Language:English
Published: IEEE 2019
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Online Access:https://nuclea.cnea.gob.ar/handle/20.500.12553/5481
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author Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
author2 Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
author_browse Alcalde Bessia, F.
André, N.
Flandre, D.
Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Gómez Berisso, M.
Irazoqui, J.
Lipovetzky, J.
Pérez, M.
author_facet Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
author_sort Alcalde Bessia, F.
collection DSpace
description Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
id dspace-20.500.12553-5481
institution Repositorio Institucional NUCLEA
language eng
publishDate 2019
publishDateSort 2019
publisher IEEE
publisherStr IEEE
record_format dspace
spelling dspace-20.500.12553-54812024-05-08T05:32:42Z Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Alcalde Bessia, F. Flandre, D. André, N. Irazoqui, J. Pérez, M. Gómez Berisso, M. Lipovetzky, J. RADIACIONES IONIZANTES DETECTORES DE RADIACIONES RADIOTERAPIA Ionizing radiation sensors Silicon on insulator (SOI) Silicon radiation detectors Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Pérez, M. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina Fil: Gómez Berisso, M. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Lipovetzky, J. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina; International Center for Theoretical Physics: I, Trieste; Italia Fil: Flandre, D. Université Catholique de Louvain, Electrical Engineering Department; Bélgica Fil: André, N. Université Catholique de Louvain, Electrical Engineering Department; Bélgica Fil: Irazoqui, J. Fundación Instituto de Tecnologías Nucleares para la Salud, Bariloche; Argentina IEEE Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas 2019-10-02 info:eu-repo/semantics/openAccess application/pdf https://nuclea.cnea.gob.ar/handle/20.500.12553/5481 1558-1578 0018-9499 eng v. 67, n. 10 IEEE Transactions on Nuclear Science info:eu-repo/semantics/openAccess
spellingShingle RADIACIONES IONIZANTES
DETECTORES DE RADIACIONES
RADIOTERAPIA
Ionizing radiation sensors
Silicon on insulator (SOI)
Silicon radiation detectors
Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title_full Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title_fullStr Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title_full_unstemmed Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title_short Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
title_sort ultra low power ionizing dose sensor based on complementary fully depleted mos transistors for radiotherapy application
topic RADIACIONES IONIZANTES
DETECTORES DE RADIACIONES
RADIOTERAPIA
Ionizing radiation sensors
Silicon on insulator (SOI)
Silicon radiation detectors
url https://nuclea.cnea.gob.ar/handle/20.500.12553/5481
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