APA (7th ed.) Citation
Alcalde Bessia, F., Flandre, D., André, N., Irazoqui, J., Pérez, M., Gómez Berisso, M., . . . Temperaturas, G. F. D. M. C. D. B. (2019). Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. IEEE.
Chicago Style (17th ed.) Citation
Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, J. Lipovetzky, and Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas. Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. IEEE, 2019.
MLA (9th ed.) Citation
Alcalde Bessia, F., et al. Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application. IEEE, 2019.
Warning: These citations may not always be 100% accurate.