Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina; Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
Saved in:
| Main Authors: | , , , , , , |
|---|---|
| Other Authors: | |
| Language: | English |
| Published: |
IEEE
2019
|
| Subjects: | |
| Online Access: | https://nuclea.cnea.gob.ar/handle/20.500.12553/5481 |
| Tags: |
No Tags, Be the first to tag this record!
|
Similar Items: Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
- Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
- Arreglos de sensores de radiación ionizante integrados
- A Simplified Method for Preparing I131-Labelled Hippuran
- Manual del curso de metodología y aplicación de radioisótopos. Integradores
- Radioisotope techniques
- Gas chromatographic analysis of the products from the gamma-induced reaction between H2 and CCI4