Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement

Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina

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Bibliographic Details
Main Authors: Alcalde Bessia, F., Flandre, D., André, N., Irazoqui, J., Pérez, M., Gómez Berisso, M., Lipovetzky, J.
Other Authors: Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Language:English
Published: IEEE (Institute of Electrical and Electronics Engineers) 2018
Subjects:
Online Access:https://nuclea.cnea.gob.ar/handle/20.500.12553/5469
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author Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
author2 Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
author_browse Alcalde Bessia, F.
André, N.
Flandre, D.
Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Gómez Berisso, M.
Irazoqui, J.
Lipovetzky, J.
Pérez, M.
author_facet Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
author_sort Alcalde Bessia, F.
collection DSpace
description Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina
id dspace-20.500.12553-5469
institution Repositorio Institucional NUCLEA
language eng
publishDate 2018
publishDateSort 2018
publisher IEEE (Institute of Electrical and Electronics Engineers)
publisherStr IEEE (Institute of Electrical and Electronics Engineers)
record_format dspace
spellingShingle TRANSISTORES
EFECTOS DE LAS RADIACIONES
ACELERADORES LINEALES
Radiation dosimeter
SOI
Transistors
Sensitivity
Logic gates
Radiation effects
Threshold voltage
Voltage measurement
Annealing
Alcalde Bessia, F.
Flandre, D.
André, N.
Irazoqui, J.
Pérez, M.
Gómez Berisso, M.
Lipovetzky, J.
Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
thumbnail https://nuclea.cnea.gob.ar/server/api/core/bitstreams/b56054e2-f70d-4ed8-9f0d-fe87fb70debc/content
title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
title_full Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
title_fullStr Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
title_full_unstemmed Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
title_short Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
title_sort fully depleted soi mosfet sensors in accumulation mode for total dose measurement
topic TRANSISTORES
EFECTOS DE LAS RADIACIONES
ACELERADORES LINEALES
Radiation dosimeter
SOI
Transistors
Sensitivity
Logic gates
Radiation effects
Threshold voltage
Voltage measurement
Annealing
url https://nuclea.cnea.gob.ar/handle/20.500.12553/5469
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