Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina
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| Language: | English |
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IEEE (Institute of Electrical and Electronics Engineers)
2018
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| Online Access: | https://nuclea.cnea.gob.ar/handle/20.500.12553/5469 |
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| _version_ | 1866906960881778688 |
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| author | Alcalde Bessia, F. Flandre, D. André, N. Irazoqui, J. Pérez, M. Gómez Berisso, M. Lipovetzky, J. |
| author2 | Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas |
| author_browse | Alcalde Bessia, F. André, N. Flandre, D. Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas Gómez Berisso, M. Irazoqui, J. Lipovetzky, J. Pérez, M. |
| author_facet | Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas Alcalde Bessia, F. Flandre, D. André, N. Irazoqui, J. Pérez, M. Gómez Berisso, M. Lipovetzky, J. |
| author_sort | Alcalde Bessia, F. |
| collection | DSpace |
| description | Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina |
| id | dspace-20.500.12553-5469 |
| institution | Repositorio Institucional NUCLEA |
| language | eng |
| publishDate | 2018 |
| publishDateSort | 2018 |
| publisher | IEEE (Institute of Electrical and Electronics Engineers) |
| publisherStr | IEEE (Institute of Electrical and Electronics Engineers) |
| record_format | dspace |
| spelling | dspace-20.500.12553-54692024-05-11T05:32:23Z Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Alcalde Bessia, F. Flandre, D. André, N. Irazoqui, J. Pérez, M. Gómez Berisso, M. Lipovetzky, J. TRANSISTORES EFECTOS DE LAS RADIACIONES ACELERADORES LINEALES Radiation dosimeter SOI Transistors Sensitivity Logic gates Radiation effects Threshold voltage Voltage measurement Annealing Fil: Alcalde Bessia, F. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina Fil: Pérez, M. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina Fil: Gómez Berisso, M. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina Fil: Lipovetzky, J. Comisión Nacional de Energía Atómica. Instituto Balseiro; Argentina Fil: Flandre, D. Université Catholique de Louvain; Bélgica Fil: André, N. Université Catholique de Louvain; Bélgica Fil: Irazoqui, J. Fundación Instituto de Tecnologías Nucleares para la Salud, Bariloche; Argentina IEEE (Institute of Electrical and Electronics Engineers) Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas 2018-00-00 info:eu-repo/semantics/openAccess application/pdf https://nuclea.cnea.gob.ar/handle/20.500.12553/5469 eng IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) info:eu-repo/semantics/openAccess |
| spellingShingle | TRANSISTORES EFECTOS DE LAS RADIACIONES ACELERADORES LINEALES Radiation dosimeter SOI Transistors Sensitivity Logic gates Radiation effects Threshold voltage Voltage measurement Annealing Alcalde Bessia, F. Flandre, D. André, N. Irazoqui, J. Pérez, M. Gómez Berisso, M. Lipovetzky, J. Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title | Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title_full | Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title_fullStr | Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title_full_unstemmed | Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title_short | Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
| title_sort | fully depleted soi mosfet sensors in accumulation mode for total dose measurement |
| topic | TRANSISTORES EFECTOS DE LAS RADIACIONES ACELERADORES LINEALES Radiation dosimeter SOI Transistors Sensitivity Logic gates Radiation effects Threshold voltage Voltage measurement Annealing |
| url | https://nuclea.cnea.gob.ar/handle/20.500.12553/5469 |
| work_keys_str_mv | AT alcaldebessiaf fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT flandred fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT andren fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT irazoquij fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT perezm fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT gomezberissom fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement AT lipovetzkyj fullydepletedsoimosfetsensorsinaccumulationmodefortotaldosemeasurement |