Alcalde Bessia, F., Flandre, D., André, N., Irazoqui, J., Pérez, M., Gómez Berisso, M., . . . Temperaturas, G. F. D. M. C. D. B. (2018). Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement. IEEE (Institute of Electrical and Electronics Engineers).
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Chicago Style (17th ed.) Citation
Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, J. Lipovetzky, and Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas. Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement. IEEE (Institute of Electrical and Electronics Engineers), 2018.
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MLA (9th ed.) Citation
Alcalde Bessia, F., et al. Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement. IEEE (Institute of Electrical and Electronics Engineers), 2018.
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Warning: These citations may not always be 100% accurate.