Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction

Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina

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Bibliographic Details
Main Authors: Palumbo, Félix Roberto Mario, Miranda, Enrique
Published: Institute of Electrical and Electronics Engineers 2011
Online Access:https://nuclea.cnea.gob.ar/handle/20.500.12553/8004
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author Palumbo, Félix Roberto Mario
Miranda, Enrique
author_browse Miranda, Enrique
Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Miranda, Enrique
author_sort Palumbo, Félix Roberto Mario
collection DSpace
description Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
id dspace-20.500.12553-8004
institution Repositorio Institucional NUCLEA
publishDate 2011
publishDateSort 2011
publisher Institute of Electrical and Electronics Engineers
publisherStr Institute of Electrical and Electronics Engineers
record_format dspace
spellingShingle Palumbo, Félix Roberto Mario
Miranda, Enrique
Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
thumbnail https://nuclea.cnea.gob.ar/server/api/core/bitstreams/b25be72e-2ffd-484e-9ad4-e90fa95c310c/content
title Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_fullStr Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full_unstemmed Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_short Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_sort modeling of the tunneling current in mos devices after proton irradiation using a nonlinear series resistance correction
url https://nuclea.cnea.gob.ar/handle/20.500.12553/8004
work_keys_str_mv AT palumbofelixrobertomario modelingofthetunnelingcurrentinmosdevicesafterprotonirradiationusinganonlinearseriesresistancecorrection
AT mirandaenrique modelingofthetunnelingcurrentinmosdevicesafterprotonirradiationusinganonlinearseriesresistancecorrection