Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction

Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina

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Bibliographic Details
Main Authors: Palumbo, Félix Roberto Mario, Miranda, Enrique
Published: Institute of Electrical and Electronics Engineers 2011
Online Access:https://nuclea.cnea.gob.ar/handle/20.500.12553/8004
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author Palumbo, Félix Roberto Mario
Miranda, Enrique
author_browse Miranda, Enrique
Palumbo, Félix Roberto Mario
author_facet Palumbo, Félix Roberto Mario
Miranda, Enrique
author_sort Palumbo, Félix Roberto Mario
collection DSpace
description Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina
id dspace-20.500.12553-8004
institution Repositorio Institucional NUCLEA
publishDate 2011
publishDateSort 2011
publisher Institute of Electrical and Electronics Engineers
publisherStr Institute of Electrical and Electronics Engineers
record_format dspace
spelling dspace-20.500.12553-80042025-12-12T05:32:32Z Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction Palumbo, Félix Roberto Mario Miranda, Enrique Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica. Gerencia del Área de Investigaciones y Aplicaciones no Nucleares. Gerencia de Física (Centro Atómico Constituyentes); Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina Fil: Miranda, Enrique. Universitat Autònoma de Barcelona; España Institute of Electrical and Electronics Engineers 2011-02 info:eu-repo/semantics/openAccess application/pdf https://nuclea.cnea.gob.ar/handle/20.500.12553/8004 0018-9499
spellingShingle Palumbo, Félix Roberto Mario
Miranda, Enrique
Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_fullStr Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_full_unstemmed Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_short Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
title_sort modeling of the tunneling current in mos devices after proton irradiation using a nonlinear series resistance correction
url https://nuclea.cnea.gob.ar/handle/20.500.12553/8004
work_keys_str_mv AT palumbofelixrobertomario modelingofthetunnelingcurrentinmosdevicesafterprotonirradiationusinganonlinearseriesresistancecorrection
AT mirandaenrique modelingofthetunnelingcurrentinmosdevicesafterprotonirradiationusinganonlinearseriesresistancecorrection