Palumbo, F. R. M., & Miranda, E. (2011). Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction. Institute of Electrical and Electronics Engineers.
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Chicago Style (17th ed.) Citation
Palumbo, Félix Roberto Mario, and Enrique Miranda. Modeling of the Tunneling Current in MOS Devices After Proton Irradiation Using a Nonlinear Series Resistance Correction. Institute of Electrical and Electronics Engineers, 2011.
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MLA (9th ed.) Citation
Palumbo, Félix Roberto Mario, and Enrique Miranda. Modeling of the Tunneling Current in MOS Devices After Proton Irradiation Using a Nonlinear Series Resistance Correction. Institute of Electrical and Electronics Engineers, 2011.
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Warning: These citations may not always be 100% accurate.