Numerical modeling of radiation-induced charge neutralization in MOS devices
Fil: Sambuco Salomone, Lucas Ignacio. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física. Laboratorio de Física de Dispositivos Microelectrónica; Argentina
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Published: |
Pergamon-Elsevier Science Ltd
2022
|
| Online Access: | https://nuclea.cnea.gob.ar/handle/20.500.12553/8078 |
| Tags: |
No Tags, Be the first to tag this record!
|
Similar Items: Numerical modeling of radiation-induced charge neutralization in MOS devices
- Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry
- CCD [ChargeCoupled Devices] arrays, cameras, and displays.
- Low threshold acquisition controller for skipper charge coupled devices
- Modeling of the tunneling current in MOS devices after proton irradiation using a nonlinear series resistance correction
- Charged-particle-induced radiative capture; proceedings.
- Analysis of charge transport : a mathematical study of semiconductor devices.