Coexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices

Fil: Ramírez, G. A. Comisión Nacional de Energía Atómica. Instituto de Nanociencia y Nanotecnología; Argentina

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Bibliographic Details
Main Authors:	Ramírez, G. A., Román Acevedo, W., Rengifo, M., Nuñez, J. M., Aguirre, M. H., Briático,J., Rubi,D.
Language:	English
Published:	Elsevier 06-0
Subjects:	TRANSFORMACIONES DE FASE PEROVSKITA CAPAS FINAS METALES DE TRANSICION Phase transitions, Memristor devices, Perovskites, Resistive switching, Thin films, Transition metal oxides
Online Access:	https://nuclea.cnea.gob.ar/handle/20.500.12553/5138 https://doi.org/10.1063/5.0132047
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