Resistive switching : from fundamentals of nanionic redox processes to memristive device applications /
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Weinheim, Germany :
Wiley-VCH,
c2016.
|
| Subjects: | |
| Tags: |
No Tags, Be the first to tag this record!
|
MARC
| LEADER | 00000nam a2200000 a 4500 | ||
|---|---|---|---|
| 003 | AR-SmCIES | ||
| 005 | 20190115153206.0 | ||
| 008 | 180425s2016 gw a|||frfn|| 001 0 eng d | ||
| 999 | |c 26570 |d 26570 | ||
| 020 | |a 9783527334179 | ||
| 041 | |a eng | ||
| 044 | |a gw | ||
| 080 | 0 | |a 620.3 | |
| 245 | 0 | 0 | |a Resistive switching : |b from fundamentals of nanionic redox processes to memristive device applications / |c edited by Daniele Ielmini and Rainer Waser. |
| 260 | 1 | |a Weinheim, Germany : |b Wiley-VCH, |c c2016. | |
| 300 | |a xviii, 755 p. : |b il. (principalmente col.), diagrs. ; |c 24 cm. | ||
| 504 | |a Incluye bibliografía al final de cada capítulo e índice analítico. | ||
| 505 | 0 | 0 | |t 1. Introduction to nanoionic elements for information technology / |r Rainer Waser, Daniele Ielmini, Hiro Akinaga, Hisashi Shima, H.-S. Philip, Wong, Joshua J. Yang, and Simon Yu -- |t 2. ReRAM Cells in the framework of two-terminal devices / |r E. Linn, M. Di Ventra, and Y. V. Pershin -- |t 3. Atomic and electronic structure of oxides / |r Tobias Zacherle, Peter C. Schmidt, and Mandfred Martin -- |t 4. Defect structure of metal oxides / |r Giuliano Gregori -- |t 5. Ion transport in metal oxides / |r Roger A. De Souza -- |t 6. Electrical transport in transition metal oxides / |r Franklin J. Wong and Shriram Ramanathan -- |t 7. Quantum point contact conduction / |r Jan van Ruitenbeek, Monica Morales Masis, and Enrique Miranda -- |t 8. Dielectric breakdown process / |r Jordi Suñé, Nagarajan Raghavan, and K. L. Pey -- |t 9. Physics and chemistry of nanoionic cells / |r Ilia Valov and Rainer Waser -- |t 10. Electroforming processes in metal oxide resistive-switching cells / |r Doo Seok Jeong, Byung Joon Choi, Cheol Seong Hwang -- |t 11. Universal switching behavior / |r Daniele Ielmini and Stephan Menzel -- |t 12. Quasitastic and pulse measuring techniques / |r Antonio Torrezan, Gilberto Mederiros-Ribeiro, and Stephan Tiedke -- |t 13. Unipolar resistive-switching mechanisms / |r Ludovic Goux and Sabina Spiga -- |t 14. Modeling the VCM- and ECM-Type Switching Kinetics / |r Stephan Menzel and Ji-Hyun Hur -- |t 15. Valence change observed by nanospectroscopy / |r Christian Lenser, Regina Dittmann, and John Paul Strachan -- |t 16. Interface-type switching / |r Akihito Sawa and Rene Meyer -- |t 17. Electrochemical metallization memories / |r Michael N. Kozicki, Maria Mitkova, and Ilia Valov -- |t 18. Atomic Switches / |r Kazuya Terabe, Tohru Tsuruoka, Tsuyoshi Hasegawa, Alpana Nayak, Takeo Ohno, Tomonobu Nakayama, and Masakazu Aono -- |t 19. Scaling limits of nanoionic devices / |r Victor Zhirnov and Gurtej Sandhu -- |t 20. Integration technology and cell design / |r Fred Chen, Jun Y. Seok, and Cheol S. Hwang -- |t 21. Reliability aspects / |r Dirk J. Wouters, Yang-Yin Chen, Andrea Fantini, and Nagarajan Raghavan -- |t 22. Select device concepts for crossbar arrays / |r Geoffrey W. Burr, Rohit S. Shenoy, and Hyunsang Hwang -- |t 23. Bottom-up approaches for resistive switching memories / |r Sabina Spiga, Takeshi Yanagida, and Tomoji Kawai -- |t 24. Switch application in FPGA / |r Toshitsugu Sakamoto, S. Simon Wong, and Young Yang Liauw -- |t 25. ReRAM-based neuromorphic computing / |r Giacomo Indiveri, Eike Linn, and Stefano Ambrogio. |
| 650 | 1 | 7 | |2 INIS |a NANOTECNOLOGIA |9 288 |
| 650 | 1 | 7 | |2 INIS |a NANOELECTRONICA |9 294 |
| 650 | 1 | 7 | |2 INIS |a CIRCUITOS ELECTRONICOS |9 295 |
| 650 | 1 | 7 | |2 INIS |a CIRCUITOS DE CONMUTACION |9 296 |
| 650 | 2 | 7 | |2 INIS |a CONDUCTIVIDAD ELECTRICA |9 297 |
| 650 | 2 | 7 | |2 INIS |a MEMORIAS |9 298 |
| 650 | 2 | 7 | |2 INIS |a DISPOSITIVOS DE MEMORIAS DE CAPA DELGADA |9 289 |
| 650 | 2 | 7 | |2 INIS |a MEMORIAS MAGNETICAS |9 290 |
| 650 | 2 | 7 | |2 INIS |a MEMORIAS DE SEMICONDUCTORES |9 291 |
| 650 | 2 | 7 | |2 INIS |a MATERIALES |9 104 |
| 650 | 2 | 7 | |9 292 |a INGENIERIA ELECTRICA |2 inist |
| 650 | 2 | 7 | |2 INIS |a FISICA DEL ESTADO SOLIDO |9 293 |
| 653 | 1 | 0 | |a Materia condensada |a ReRAM |
| 942 | |2 udc |c BK |h 620.3 | ||
| 952 | |0 0 |1 0 |2 ddc |4 0 |7 0 |a CIES-CAC |b CIES-CAC |c NEW |d 2018-04-26 |e Compra |i 51415 |l 2 |m 8 |o 620.3 R433 |p 51415 |r 2025-02-04 00:00:00 |s 2022-01-06 |w 2018-04-26 |y BK | ||