Similar Items: Ranges in silicon of ions with atomic numbers 62 ⩽ Z1 ⩽ 66 at 100 keV.
- Charge equilibrium of helium ions in helium gas from 60 to 840 keV.
- The recrystallization of ion-implanted silicon layers. II: Implant species effect.
- Efectos de tensiones internas cristalinas en espectros de resonancias paramagnética electrónica caso Ni Z+ en OCa
- Molecular effects on ion-electron emission from clean metal surfaces.
- Ionic processes in solution.
- Negative ions.
Author: Baragiola, R. A.
- Ion-induced Auger-electron emission from aluminum
- Cross sections for single and double electron capture from He++ on hydrogen, neon and argon.
- Charge-state distributions in collisions of H and He with magnesium.
- Electron capture and loss in collisions of H+ and H with Pb vapors.
- Electron emission from clean metal surfaces induced by low-energy light ions.
- Sobre un nuevo estado ligado del ion He.