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    Coexistence of volatile and nonvolatile memristive effects in phase-separated La0.5Ca0.5MnO3-based devices by Ramírez, G. A., Román Acevedo, W., Rengifo, M., Nuñez, J. M., Aguirre, M. H., Briático,J., Rubi,D.

    Published 06-0
    Subjects: “…Phase transitions, Memristor devices, Perovskites, Resistive switching, Thin films, Transition metal oxides…”
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