Similar Items: Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement
- Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
- Transistores, circuitos-diseño.
- Transistores; intruccion programadada.
- Transistor circuit design.
- MANUAL Universal de diodos y transistores; principales características y reemplazos.
- Répertoire mondial des transistors: toutes les caractéristiques pour identifier, sélectionner et substituer.
Author: Gerencia Física. Departamento Materia Condensada. División Bajas Temperaturas
- Low angle electron scattering in thermal resistivity
- Critical behavior of Young's modulus for two-dimensional randomly holed metallized Mylar
- Improving the Josephson energy in high-Tc superconducting junctions for ultra-fast electronics
- Fingerprint of dynamical spin-charge correlations in the tunneling spectra of colossal magnetoresistive manganites
- Why the Co-based 115 compounds are different: The case study of GdMIn5 (M = Co,Rh,Ir)
- Observation of a gel of quantum vortices in a superconductor at very low magnetic fields
Author: Alcalde Bessia, F.
- Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation
- Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application
- Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature
- Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement