Search Results - Williams, J. S.

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    Ranges in silicon of ions with atomic numbers 62 ⩽ Z1 ⩽ 66 at 100 keV. by Baragiola, R. A., Chivers, D., Dodds, D., Grant, W. A., Williams, J. S.

    Published 1976
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    The recrystallization of ion-implanted silicon layers. II: Implant species effect. by Christodoulides, C. E., Baragiola, R. A., Chivers, D., Grant, W. A., Williams, J. S.

    Published 1978
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